型号 SI5902BDC-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH 30V 1206-8
SI5902BDC-T1-GE3 PDF
代理商 SI5902BDC-T1-GE3
标准包装 3,000
系列 TrenchFET®
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 4A
开态Rds(最大)@ Id, Vgs @ 25° C 65 毫欧 @ 3.1A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 7nC @ 10V
输入电容 (Ciss) @ Vds 220pF @ 15V
功率 - 最大 3.12W
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 1206-8 ChipFET?
包装 带卷 (TR)
其它名称 SI5902BDC-T1-GE3TR
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